Vertical Strained Impact Ionization MOSFET (VESIMOS) Technology Approach for Based Biosensor Applications using its Behavioral Model

This paper gives an overview about uniqueness characteristics of Vertical Strained Impact Ionization MOSFET (VESIMOS) technology act as bio-sensing devices. There are three proposed devices used VESIMOS technology which are Single Channel VESIMOS (SC-VESIMOS), Dual Channel (DC-VESIMOS), VESIMOS Incorporating Dielectric Pocket (VESIMOS-DP) are probably can become feasible candidates as biosensor devices. The selected devices from three structures was further analyzed for its behavioral model. The extracted parameter from the device simulations was used to design the circuitry model to represent the characteristic and behavior of the selected devices in circuit implementation. The best characteristic of the device shown by DC-VESIMOS and selected for further analysis. The behavioral model or equivalent circuit model of DC-VESIMOS used PSPICE circuit simulator. Main prerequisite of biosensor device are high sensitivity, faster response, and high reliability which represented by the VESIMOS structures. Low subthreshold swings present the sensitivity of the devices shown by DC-VESIMOS are 11.48 mV/dec and 10.53 mV/dec from TCAD and PSPICE results respectively

Enhanced reliability of vertical strained impact ionization MOSFET incorporating dielectric pocket for ultra-sensitive biosensor applications

Fast switching with an enhanced reliability device structure of Vertical Strained Impact Ionization MOSFET incorporating Dielectric Pocket (VESIMOS-DP) has been successfully design, simulated and analyzed in this paper. Ultra-low power with low subthreshold swing (S) and high breakdown voltage are imperative for ultra-sensitive biosensors. Impact ionization MOSFET (IMOS) is predicted to be capable of S as low as 20 mV/dec, which is much lower than Conventional MOSFET (CMOS). There are significant drop in subthreshold slope (S) while threshold voltage is increase as the body doping concentration increases. S value for DP place at source side is higher (S 24.4 mV/decade) as compared at the drain side (S 18.9 mV/decade) intrinsic region. The vicinity of DP near the drain region reduces charge sharing effects associated with the source and thus improves impact ionization rate. The introduction of a Dielectric Pocket (DP) is believed to be able to minimize the PBT effect while improving the reliability of the device by attaining higher breakdown voltage. Consequently, with the reduced of alloy scattering, the electron mobility has been improved by 22%. In many aspects, it is revealed that the incorporation of DP enhanced the reliability of VESIMOS for future development of nanoelectronic devices

Electromyogram (EMG) signal processing analysis for clinical rehabilitation application

Analysis of electromyogram (EMG) signal processing and its application to identify human muscle strength of rehabilitation purpose has been successfully carried out in this paper. Single channel EMG signal was obtained from human muscle using non-invasive electrodes and further process by signal acquisition circuit to get a suitable signal to be process. In the first part of signal acquisition, the amplification circuit for the small EMG signal has been design successfully. After amplification stage EMG signal was digitized through analogue and digital converter (ADC) then further process in microcontroller (ATmega328) for getting accurate EMG signal. Finally, the processed EMG signal was classified into 6 different levels in order to display the muscle strength level of the user. This EMG device can be used to help the weak person or an elderly to identity their strength level of muscle for clinical rehabilitation purpose

Equivalent circuit model analysis of vertical impact ionization MOSFET (IMOS)

In this paper, an equivalent circuit model is proposed that describes the avalanche and snapback characteristics of Vertical Impact Ionization MOSFET (IMOS). The equivalent circuit model is constructed using MOS transistors that represent the avalanche characteristics. The main goal is to predict the vertical IMOS integrated circuits by using circuit simulations. The vertical IMOS is predicted to have a lower subthreshold slope and high ratio of current. Besides that, the equivalent circuit model is explained which is include the parasitic bipolar transistor with a generated-hole-dependent base resistance. The models for parasitic bipolar is combined with a PSPICE MOS transistor model and it is represented the gate bias dependence of snapback characteristic. The equivalent circuit parameters are extracted from the reference experimental values of previous research and modified to reproduce the measured avalanche and snapback characteristic of the vertical IMOS transistor. The results show that 90% of the analysis subthreshold slope value of circuit simulations similar to the reference experimental value. The ratio of the current also shows almost the same behavior. Therefore, the equivalent circuit model for vertical IMOS can be used in circuit simulations

Gestational diabetes mellitus and retinal microvasculature.

BACKGROUND: Small-vessel dysfunction may be an important consequence of chronic hyperglycemia. We examined the association between gestational diabetes mellitus (GDM), a state of transient hyperglycemia during pregnancy, and retinal microvascular changes in pregnant women at 26-28 weeks of pregnancy. METHODS: A total of 1136 pregnant women with singleton pregnancies were recruited during their first trimester at two major Singapore maternity hospitals in an on-going birth cohort study. Participants underwent an oral glucose tolerance test and retinal imaging at 26-28 weeks gestation (n = 542). We used the 1999 World Health Organization (WHO) criteria to define GDM: ≥7.0 mmol/L for fasting glucose and/or ≥7.8 mmol/L for 2-h post-glucose. Retinal microvasculature was measured using computer software (Singapore I Vessel Analyzer, SIVA version 3.0, Singapore Eye Research Institute, Singapore) from the retinal photographs. RESULTS: In a multiple linear regression model adjusting for age, ethnicity and maternal education, mothers with GDM had narrower arteriolar caliber (-1.6 μm; 95% Confidence Interval [CI]: -3.1 μm, -0.2 μm), reduced arteriolar fractal dimension (-0.01 Df; 95% CI: -0.02 Df, -0.001 Df;), and larger arteriolar branching angle (1.8°; 95% CI: 0.3°, 3.3°) than mothers without GDM. After further adjusting for traditional risks of GDM, arteriolar branching angle remained significantly larger in mothers with GDM than those without GDM (2.0°; 95% CI: 0.5°, 3.6°). CONCLUSIONS: GDM was associated with a series of retinal arteriolar abnormalities, including narrower caliber, reduced fractal dimension and larger branching angle, suggesting that transient hyperglycemia during pregnancy may cause small-vessel dysfunction

Plasma ω-3 fatty acids in pregnancy are inversely associated with postpartum weight retention in a multiethnic Asian cohort

10.3945/ajcn.116.151258American Journal of Clinical Nutrition10551158-1165GUSTO (Growing up towards Healthy Outcomes